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Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

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Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Brand Name : ZG

Model Number : MS

Certification : CE

Place of Origin : CHINA

MOQ : 1 piece

Price : USD10/piece

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 10000 pieces per month

Delivery Time : 3 working days

Packaging Details : Strong wooden box for Global shipping

Application : making LD , LED , microwave circuit and solar cell applications

Diameter : Ø 2" / Ø 3" / Ø 4"

Thickness : 350 um ~ 625 um

Grade : Epi polished grade / mechanical grade

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Single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell

We provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) to opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , in diameter range from 2" to 4 ". We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical propertirs and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafers , both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications , please contact us for more product information .

GaAs Wafer Feature and Application

Feature	Application field
High electron mobility	Light emitting diodes
High frequency	Laser diodes
High conversion efficiency	Photovoltaic devices
Low power consumption	High Electron Mobility Transistor
Direct band gap	Heterojunction Bipolar Transistor

Product Specification

Growth	LEC / VGF
Diameter	Ø 2" / Ø 3" / Ø 4"
Thickness	350 um ~ 625 um
Orientation	<100> / <111> / <110> or others
Conductivity	P - type / N - type / Semi-insulating
Dopant	Zn / Si / undoped
Surface	One side polished or two sides polished
Concentration	1E17 ~ 5E19 cm-3
TTV	<= 10 um
Bow / Warp	<= 20 um
Grade	Epi polished grade / mechanical grade

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

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Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Polycrystalline GaAs Wafer

Single Crystal Gallium Arsenide

Gallium Arsenide For LD LED

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit Images